Nano Aluminum Nitride CAS No: 24304-00-5
Nano Aluminum nitride Our advantage for nano Aluminum nitride: High purity: we can supply more than 99.9% purity Low impurity: for certain impurity, we can keep less than 0.1ppm Particle size: we can provide 20-30nm, 50nm, 100nm, 1um, etc. Also the size could be customized as your request....
Nano Aluminum nitride
Our advantage for nano Aluminum nitride:
High purity: we can supply more than 99.9% purity
Low impurity: for certain impurity, we can keep less than 0.1ppm
Particle size: we can provide 20-30nm, 50nm, 100nm, 1um, etc. Also the size could be customized as your request.
Competitive price: for nano Aluminum nitride, we can provide more competitive price
After sales service: If quality not come to your satisfaction, we promise to return all payment back.
Brief introduction for nano Aluminum nitride
Formula: nano AlN
CAS No.: 24304-00-5
Molecular Weight: 40.99
Density: 3.26 g/mL
Melting point: 2200 °C
Appearance: White powder
Application of nano Aluminum nitride
1. Manufacture integrated circuit foundation plate, the electronic device, the optical device, the radiator, the high temperature crucible prepares metal-based and the high score subbasis compound materials, specially enhances the material in the high temperature sealing compound and in the electronic seal material the heat dispersion and the intensity characteristic, has the extremely good application prospect, may substitute for the present import a micron aluminium nitride;
2. Heat conduction silica gel and heat conduction epoxy resin: A nanometer aluminium nitride which produces with Our company prepares the superelevation heat conduction silica gel, it has the good thermal conductivity, good overcharge insulating property, wide electric insulation and application temperature (operating temperature - 80-250℃), low thickness and good construction performance. The product has reached or surpasses the imported product, because may substitute for the similar imported product, but widely applies in electronic device's heat transfer medium, raises the working efficiency. If CPU and radiator crack, high efficiency triode, silicon-controlled rectifier part, diode, with parent metal contact fine drawn place heat transfer medium. The nanometer heat conduction paste is between packing IC or the triode and radiator fin's crevice, increases between them the contacted area, achieves the better radiation effect;