Ukucoceka okuphezulu kweCas 25617-97-4 Gallium nitride 4N GaN ixabiso lomgubo
Ingcaciso yeMveliso
Igama lemveliso: gallium nitride
I-gallium nitride Ifomula yemolekyuli :GaN
gallium nitride Umbala: tyheli mhlophe
gallium nitride Ubunzima beMolekyuli: 83.72
Isatifikethi soHlahlelo lweGallium Nitride:
| Into | GaN | Cu | Ni | Zn | Al | Na | Cr | In | Ca |
| Umxholo % | 99.99% | 0.0005 | 0.0003 | 0.0005 | 0.001 | 0.0005 | 0.0003 | 0.0005 | 0.005 |
Iimpawu zegallium nitride:
iGallium nitride(I-GaN) i-semiconductor eneempawu ezizodwa ezenza kube luncedo ekudalweni kwezixhobo ezisebenzayo ze-optoelectronic ukongeza kumandla aphezulu kunye nobushushu obuphezulu bezicelo.Ezi zixhobo kufuneka zifumane usetyenziso olubanzi olusebenzayo kwiimarike zorhwebo kunye nokukhusela.I-Database ye-Inspec igubungela uninzi lwezi teknoloji zivelayo.
Ukusetyenziswa kwe-gallium nitride:
I-GaN inokusetyenziselwa izikrini ezinkulu zikamabonakude okanye iiphaneli ezincinci ezinemibala egcweleyo koololiwe okanye ezibhasini.Ukuboniswa kombala ogcweleyo bekungenzeki kuba ii-LED eziluhlaza kunye noluhlaza bezingaqaqambi ngokwaneleyo.Ii-LED ezisekwe kwi-GaN zisebenza ngakumbi kwaye ke ngoko zibonelela ngenye indlela yee-LED eziluhlaza kunye neluhlaza.
Ukugcinwa kwe-gallium nitride:
iGallium nitridekufuneka ivalwe kwaye igcinwe kwiqondo lokushisa, ukuba iimeko zivunyelwe, zingagcinwa kwi-argon atmosphere.
