Factory copiam Liquid Metal Gallii Indium Alloy lucretur Metal Ga75.5in24.5 / Ga78.6in21.4
Brevis
I. Product Name: Factory copia Liquid MetalGallium IndiumMixtura Metallum Ga75.5in24.5 / Ga78.6in21.4
II. Formula:Producomixtura
III. Puritas: 99.99%, 99,999%
IV. Content: Ga, in = 75.5: 24,5 (78.5: 21.4 aut customized)
V. Vultus: Silver Alba Liquid Metal
Performatio
Optimum scelerisque et electrica conductivity, firmum proprietatibus, tutum et non-toxicus
Idoneam plastic utrem et relinqui aliqua spatio, non facis in speculo vasis.
Gallium, indium mleyest metallum stanio composito ex indium et Gallium. Maxime communis compositionem hoc alleo LXXV% Gallii et XXV% indium (quaestum 75/25). Fretus ratio elementis, in physica et eget proprietatibus de stanica erit variantur. Hoc Alloy notum est humilis liquescens punctum infra locus temperatus, faciens illud utile materia ad cryogenic applications. Suus 'etiam autectic mixta, id est a acri liquidum-ut-solidum transitus temperatus, faciens illud potentia utile ut thermostat vel calor descendat.Gallium, indium alloysSunt altus PROLIXUS faciens utiles electronic electrica applications tum welding et atrio. Ob sua humilis liquescens punctum et bonum scelerisque conductivity, quod potest etiam esse ut liquor metallum coolant. Altiore, Gallii Indium Alloys habere unique compositum ex proprietatibus quae faciunt idoneam ad varietatem applications, praesertim in humilis temperatus, electrica et scelerisque administratione systems.
Applicatio
I. Praeparatio Gallii Arsenide (Gaas), Gallium phoshpide (Gap) etGallium Nitride(Gan) ad wireless
Communicationis, Led illustration
II. Gaas conuenerunt solaris cell et cigs tenues-film solaris cellulam
III. Magna substantia et t-F-B provecta magneticam materiae
IV. Minime liquescens Point Minix, PraeparatioGa2o3et semiconductor chip
Communicationis, Led illustration
II. Gaas conuenerunt solaris cell et cigs tenues-film solaris cellulam
III. Magna substantia et t-F-B provecta magneticam materiae
IV. Minime liquescens Point Minix, PraeparatioGa2o3et semiconductor chip
Specificatio
| Productio | Metallum(GA, in = 75.5: 24.5) | ||
| Batch No. | 22112503 | Quantitas | 10Kg |
| Date de vestibulum: | Nov XXV, MMXXII | Date de test: | Nov XXV, MMXXII |
| Test modus | Elementum | Concentration (PPM WT) | |
| Pudicitia | ≥99.99% | > 99.99% | |
| ICP Analysis (PPM) | Fe | 9 | |
| Cu | 10 | ||
| Pb | 12 | ||
| As | 5 | ||
| Ag | 5 | ||
| Zn | 10 | ||
| Al | 8 | ||
| Ca | 5 | ||
| Si | 6 | ||
| Mg | 5 | ||
| Notus | Xinglu | ||
