Niobium Silicide NbSi2 powder Price
Feature of Niobium Silicide
| Item | other name | CAS | EINECS | molecular weight | melting point |
| NbSi2 | Niobium silicide; Niobium disilicide | 12034-80-9 | 234-812-3 | 149.0774 | 1940℃ |
Product specification of Niobium Silicide powder
Nano grade(99.9%):10nm,20nm,30nm,40nm,50nm,80nm,100nm,200nm,300nm,500nm,800nm.
Micro grade(99.9%):1um,3um,5um,10um,20um,30um,40nm,45um,75um,150um,200um,300um.
The parameters of NiSi2 are as follows:
Chemical composition: Si: 4.3%，Mg:0.1%, the rest is Ni
Density: 8.585g/cm3
Resistance: 0.365 Q mm2 / M
Resistance temperature coefficient(20-100 ° C)689x10 minus 6th power / KCoefficient of thermal expansion (20-100° C)17x10 minus 6th power / K
Thermal conductivity (100° C)27xwm negative first power K negative first powerMelting point: 1309 °c
Application fields:
Silicon is the most widely used semiconductor materials. A variety of metal silicides have beenstudied for contact and interconnection technology of semiconductor devices.MoSi2, WSl andNi2Si have been introduced into the development of microelectronic devices.These silicon-basedthin films have good matching with silicon materials, and can be used for insulation, isolation,passivation and interconnection in silicon devices,NiSi, as the most promising self-aligned silicidematerial for nanoscale devices, has been widely studied for its low silicon loss and low formationheat budget, low resistivity and no linewidth effect In graphene electrode, nickel silicide can delaythe occurrence of pulverization and cracking of silicon electrode, and improve the conductivity ofthe electrode.The wetting and spreading effects of nisi2 alloy on SiC ceramics at different
temperatures and atmospheres were investigated.
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