Sahayda warshadaynta birta dareeraha ah Gallium Indium Tin alloy Galinstan GaInSn Ga68.5 In21.5Sn10
Hordhac kooban
1. Magaca alaabta: Nadiifinta sare 99.99Gallium Indium TinBirta dareeraha ahGalinstan GaInSn Ga68.5 In21.5Sn10
2. Formula: GaInSn
3. daahirnimo: 99.99%, 99.999%
4. Content: Ga: In: Sn=68.5:21.5: 10 ama la habeeyey
5. Muuqaal: Silver White Bir dareere ah
Waxqabadka
kulaylka iyo korantada heer sare ah, guryaha deggan, ammaan ah oo aan sun ahayn
Ku habboon dhalada balaastiigga ah waana in looga tagaa meel bannaan, laguma rari karo weelasha dhalada ah.
Gallium Indium Tin, oo sidoo kale loo yaqaan GITO, waa daawaha ternary ka kooban Gallium (Ga), Indium (In) iyo Tin (Sn).Waa shay gaar ah oo leh sifooyin indho-indhayn iyo koronto, taasoo ka dhigaysa mid ku habboon codsiyada kala duwan.Qaar ka mid ah codsiyada suurtagalka ah ee GITO waxaa ka mid ah:
1. Daahan hufan: GITO waxay baadhaysaa beddelka suurtagalka ah ee indium tin oxide (ITO), kaas oo si weyn loogu isticmaalo korantada korantada ee hufan.Waxay leedahay daah-furnaan sare iyo iska caabin hoose, taasoo ka dhigaysa mid ku habboon in loo isticmaalo bandhigyada muraayadaha fidsan, unugyada qorraxda, iyo aaladaha kale ee optoelectronic.
2. Qalabka kuleyliyaha: GITO waxa ay leedahay heerkulbeeg wanaagsan waxaana loo isticmaali karaa soo kabashada kulaylka qashinka ee codsiyada kala duwan sida baabuurta iyo warshadaha hawada.
3. Elektaroonigga dabacsan: GITO waxaa lagu kaydin karaa substrates dabacsan si loo sameeyo qalabka elektarooniga ah ee la xidhan karo.
4. Sensors: GITO waxaa loo isticmaali karaa walxo xasaasi ah oo loogu talagalay dareemayaasha kala duwan sida dareemayaasha gaaska iyo biosensors.Guud ahaan, GITO waa shay rajo leh oo leh codsiyada suurtagalka ah ee warshado kala duwan sababtoo ah sifooyinkeeda gaarka ah.Cilmi-baadhista GITO ayaa socota waxaana la filayaa inay door muhiim ah ka qaadato horumarinta tignoolajiyada cusub.
Codsiga
1. Diyaarinta Gallium Arsenide (GaAs), Gallium Phospide (GaP) iyo Gallium Nitride (GaN) ee wireless-ka
isgaarsiinta, iftiinka LED
2. Unug cadceedda ku urursan oo GAAs ah iyo CIGS unug-fulim khafiif ah
3. Walaxda birlabeedka iyo Nd-Fe-B agabka birlabeedka horumarsan
4. Daawaha barta dhalaalka hooseeya, diyaarinta Ga2O3 iyo chip semiconductor
isgaarsiinta, iftiinka LED
2. Unug cadceedda ku urursan oo GAAs ah iyo CIGS unug-fulim khafiif ah
3. Walaxda birlabeedka iyo Nd-Fe-B agabka birlabeedka horumarsan
4. Daawaha barta dhalaalka hooseeya, diyaarinta Ga2O3 iyo chip semiconductor
Tilmaamid
| Alaabta | Birta GaInSn ( Ga: In: Sn=68.5:21.5: 10) | ||
| Dufcaddii No. | 22112502 | Tirada | 100kg |
| Taariikhda wax soo saarka: | Nofeembar 25, 2022 | Taariikhda imtixaanka: | Nofeembar 25, 2022 |
| Habka tijaabada | Curiyaha | Xooga saarida (ppm wt) | |
| daahirnimo | ≥99.99% | 99.99% | |
| Falanqaynta ICP (ppm) | Fe | 6 | |
| Cu | 5 | ||
| Pb | 8 | ||
| Bi | 5 | ||
| Sb | 10 | ||
| As | 5 | ||
| Ag | 5 | ||
| Zn | 2 | ||
| Al | 5 | ||
| Ni | 2 | ||
| Ca | 2 | ||
| Si | 10 | ||
| Mg | 5 | ||
| Summada | Epoch-Chem | ||
