Ubonelelo ngefektri Ulwelo lwesinyithi Gallium Indium Tin ingxubevange Galinstan GaInSn Ga68.5 In21.5Sn10
Intshayelelo emfutshane
1. Igama lemveliso: Ukucoceka okuphezulu 99.99IGallium Indium TinIsinyithi esilulweloeGalinstan I-GaInSn Ga68.5 In21.5Sn10
2. Ifomula: GaInSn
3. Ubunyulu: 99.99%, 99.999%
4. Umxholo: Ga: Ku: Sn=68.5:21.5: 10 okanye ngokwezifiso
5. Imbonakalo: Silver White elulwelo metal
Ukusebenza
I-thermal kunye ne-conductivity egqwesileyo yombane, iipropathi ezizinzileyo, ezikhuselekileyo kwaye ezingenayo ityhefu
Ifanele ibhotile yeplastiki kwaye kufuneka ishiywe indawo, ayinakupakishwa ngezikhongozeli zeglasi.
I-Gallium Indium Tin, eyaziwa ngokuba yi-GITO, i-alloy ye-ternary equkethe i-Gallium (Ga), i-Indium (In) kunye ne-Tin (Sn).Yimathiriyeli ekhethekileyo eneempawu ezibonakalayo zombane kunye nezixhobo zombane, eziyenza ilungele usetyenziso oluhlukeneyo.Ezinye izicelo ezinokwenzeka ze-GITO ziquka:
1. I-transparent conductive coating: I-GITO iphanda njengento enokuthi ithathelwe indawo ye-indium tin oxide (ITO), esetyenziswa ngokubanzi kwii-electrodes ezibonisa ukukhanya.Inokukhanya okuphezulu kunye nokuxhathisa okuphantsi, okuyenza ilungele ukusetyenziswa kwimiboniso yepaneli ecaba, iiseli zelanga kunye nezinye izixhobo ze-optoelectronic.
2. Izixhobo ze-Thermoelectric: I-GITO ineempawu ezilungileyo ze-thermoelectric kwaye ingasetyenziselwa ukubuyisela ubushushu benkunkuma kwizicelo ezahlukeneyo ezifana ne-automotive and aerospace industries.
3. Ii-elektroniki eziguquguqukayo: I-GITO inokufakwa kwii-substrates eziguquguqukayo ukwenza i-electronics flexible wearable.
4. IiSensors: I-GITO ingasetyenziswa njengento enovakalelo kwii-sensors ezahlukeneyo ezifana ne-gas sensors kunye ne-biosensor.Ngokubanzi, i-GITO yimathiriyeli ethembisayo enezicelo ezinokubakho kumashishini ahlukeneyo ngenxa yeempawu zayo ezizodwa.Uphando kwi-GITO luyaqhubeka kwaye kulindeleke ukuba ludlale indima ebalulekileyo kuphuhliso lobuchwepheshe obutsha.
Isicelo
1. Ukulungiswa kweGallium Arsenide(GaAs), iGallium Phoshpide(GaP) kunye neGallium Nitride(GaN) ye-wireless
unxibelelwano, ukukhanya kwe-LED
2. Ii-GaAs ezigxininisiweyo ze-solar cell kunye ne-CIGS Thin-film iseli yelanga yelanga
3. Izinto zemagneti kunye ne-Nd-Fe-B imathiriyeli yamagnetic ephucukileyo
4. I-alloy ye-melting point ephantsi, ukulungiswa kwe-Ga2O3 kunye ne-semiconductor chip
unxibelelwano, ukukhanya kwe-LED
2. Ii-GaAs ezigxininisiweyo ze-solar cell kunye ne-CIGS Thin-film iseli yelanga yelanga
3. Izinto zemagneti kunye ne-Nd-Fe-B imathiriyeli yamagnetic ephucukileyo
4. I-alloy ye-melting point ephantsi, ukulungiswa kwe-Ga2O3 kunye ne-semiconductor chip
Inkcazo
| Imveliso | Intsimbi ye-GaInSn ( Ga: In: Sn=68.5:21.5: 10 ) | ||
| Inombolo yeqela. | 22112502 | Ubungakanani | 100kg |
| Umhla wokwenziwa: | Novemba 25, 2022 | Umhla wovavanyo: | Novemba 25, 2022 |
| Indlela yokuvavanya | Isiqalelo | Ugxininiso (ppm wt) | |
| Ubunyulu | ≥99.99% | ＞99.99% | |
| Uhlalutyo lwe-ICP (ppm) | Fe | 6 | |
| Cu | 5 | ||
| Pb | 8 | ||
| Bi | 5 | ||
| Sb | 10 | ||
| As | 5 | ||
| Ag | 5 | ||
| Zn | 2 | ||
| Al | 5 | ||
| Ni | 2 | ||
| Ca | 2 | ||
| Si | 10 | ||
| Mg | 5 | ||
| Uphawu | Epoch-Chem | ||
