Ukunikezwa kwefekthri Uketshezi lwensimbi Gallium Indium Tin ingxubevange Galinstan GaInSn Ga68.5 In21.5Sn10
Isingeniso esifushane
1. Igama lomkhiqizo: Ukuhlanzeka okuphezulu 99.99I-Gallium Indium TinInsimbi ewuketsheziI-Galinstan I-GaInSn Ga68.5 Ku-21.5Sn10
2. Ifomula: GaInSn
3. Ubumsulwa: 99.99%, 99.999%
4. Okuqukethwe: Ga: Ku: Sn=68.5:21.5: 10 noma ngokwezifiso
5. Ukubukeka: Silver White liquid metal
Ukusebenza
Excellent conductivity ezishisayo kanye kagesi, izakhiwo ezinzile, ephephile futhi non-toxic
Ifanele ibhodlela lepulasitiki futhi kufanele ishiywe indawo, ayikwazi ukupakishwa ngezitsha zengilazi.
I-Gallium Indium Tin, eyaziwa nangokuthi i-GITO, iyingxubevange ye-ternary ehlanganisa i-Gallium (Ga), i-Indium (In) ne-Tin (Sn).Kuyimpahla eyingqayizivele enezinto ezibonakalayo ezibonakalayo nezikagesi, okuyenza ilungele ukusetshenziswa okuhlukahlukene.Ezinye izinhlelo zokusebenza ezingenzeka ze-GITO zifaka:
1. I-transparent conductive coating: I-GITO iphenya njengento engase ibe khona esikhundleni se-indium tin oxide (ITO), esetshenziswa kabanzi kuma-electrode conductive esobala.Inokucaca okuphezulu kanye nokumelana okuphansi, okuyenza ilungele ukusetshenziswa kumaphaneli ayisicaba, amaseli elanga, namanye amadivaysi e-optoelectronic.
2. Imishini kagesi we-Thermoelectric: I-GITO inezici ezinhle ze-thermoelectric futhi ingasetshenziselwa ukubuyisela ukushisa okulahlwayo ezinhlelweni ezihlukahlukene ezifana nezimboni zezimoto kanye ne-aerospace.
3. Izinto zikagesi eziguquguqukayo: I-GITO ingafakwa kuma-substrates avumelana nezimo ukuze kwenziwe izinto zikagesi eziguquguqukayo ezigqokekayo.
4. Izinzwa: I-GITO ingasetshenziswa njengento ebucayi yezinzwa ezihlukahlukene njengezinzwa zegesi nama-biosensor.Sekukonke, i-GITO iyinto ethembisayo enezicelo ezingase zibe khona ezimbonini ezahlukahlukene ngenxa yezakhiwo zayo ezihlukile.Ucwaningo e-GITO luyaqhubeka futhi kulindeleke ukuthi lubambe iqhaza elibalulekile ekuthuthukisweni kobuchwepheshe obusha.
Isicelo
1. Ukulungiswa kwe-Gallium Arsenide(GaAs), i-Gallium Phoshpide(GaP) ne-Gallium Nitride(GaN) engenantambo
ukuxhumana, ukukhanya kwe-LED
2. Ama-GaA agxilile iseli yelanga kanye ne-CIGS Thin-film iseli solar
3. Izinto zikazibuthe kanye nezinto ezithuthukisiwe zikazibuthe ze-Nd-Fe-B
4. I-alloy yephuzu elincibilikayo eliphansi, ukulungiswa kwe-Ga2O3 ne-semiconductor chip
ukuxhumana, ukukhanya kwe-LED
2. Ama-GaA agxilile iseli yelanga kanye ne-CIGS Thin-film iseli solar
3. Izinto zikazibuthe kanye nezinto ezithuthukisiwe zikazibuthe ze-Nd-Fe-B
4. I-alloy yephuzu elincibilikayo eliphansi, ukulungiswa kwe-Ga2O3 ne-semiconductor chip
Ukucaciswa
| Umkhiqizo | Insimbi ye-GaInSn ( Ga: Ku: Sn=68.5:21.5: 10 ) | ||
| Inombolo yeqoqo. | 22112502 | Ubuningi | 100kg |
| Usuku lokukhiqiza: | Nov. 25, 2022 | Usuku lokuhlolwa: | Nov. 25, 2022 |
| Indlela yokuhlola | Isici | Ukugxila (ppm wt) | |
| Ubumsulwa | ≥99.99% | ＞99.99% | |
| Ukuhlaziywa kwe-ICP (ppm) | Fe | 6 | |
| Cu | 5 | ||
| Pb | 8 | ||
| Bi | 5 | ||
| Sb | 10 | ||
| As | 5 | ||
| Ag | 5 | ||
| Zn | 2 | ||
| Al | 5 | ||
| Ni | 2 | ||
| Ca | 2 | ||
| Si | 10 | ||
| Mg | 5 | ||
| Ibhrendi | I-Epoch-Chem | ||
