Niobium Silicide NbSi2 paura Utu

Āhuahira oNiobium Silicide

Whakatakotoranga hua oNiobium Silicidepaura

Koeke Nano(99.9%):10nm,20nm,30nm,40nm,50nm,80nm,100nm,200nm,300nm,500nm,800nm.

Koeke moroiti(99.9%):1um,3um,5um,10um,20um,30um,40nm,45um,75um,150um,200um,300um.

Ko nga tawhā o NiSi2 e whai ake nei:
Hanganga matū: Si: 4.3%，Mg:0.1%, ko te toenga ko Ni

Kiato: 8.585g/cm3

Ātete: 0.365 Q mm2 / M
Te whakarea pāmahana ātete(20-100 ° C)689x10 haunga te mana 6 / KCKorete o te roha waiariki (20-100° C)17x10 haunga te mana 6 / K
Te kawe werawera (100° C)27xwm toraro hiko tuatahi K toraro mana tuatahi Ira whakarewa: 1309 °c
Ngā āpure tono:
Ko te Silicon te nuinga o nga taputapu semiconductor e whakamahia ana.He momo silicides whakarewa kua akohia mo te whakapiri me te hangarau honohono o nga taputapu semiconductor.MoSi2, WSl meNi2Si kua whakauruhia ki te whakawhanaketanga o nga taputapu miihini hiko. , passivation and interconnection in silicon devices, NiSi, as the most promising self-aligned silicidematerial for nanoscale device, has been wide studyed for its low silicone loss and low formationheat budget, low resistance and no linewidth effect I graphene electrode, nickel silicide can delaythe puta o te pulverization me te kapiti o te hiko hiko, me te whakapai ake i te kawe o te hiko.
i tirotirohia te pāmahana me te hau.