Niobium Silicide NbSi2 phofo Theko

Tšobotsi eaNiobium silicide

Tlhaloso ea lihlahisoa tsaNiobium silicidephofo

Nano grade(99.9%):10nm,20nm,30nm,40nm,50nm,80nm,100nm,200nm,300nm,500nm,800nm.

Micro grade(99.9%): 1um,3um,5um,10um,20um,30um,40nm,45um,75um,150um,200um,300um.

Litekanyetso tsa NiSi2 ke tse latelang:
Sebopeho sa lik'hemik'hale: Si: 4.3%, Mg: 0.1%, tse ling kaofela ke Ni

Boima: 8.585g/cm3

Khanyetso: 0.365 Q mm2 / M
Mocheso o hanyetsanang le mocheso (20-100 ° C)689x10 ho tloswa matla a 6 / KCoefficient ea katoloso ea mocheso (20-100° C)17x10 ho tloswa 6th power / K
Thermal conductivity (100° C)27xwm ha mpe matla a pele K ha mpe matla a pele Ntlha e qhibilihisang: 1309 °c
Libaka tsa kopo:
Silicon ke thepa ea semiconductor e sebelisoang ka ho fetisisa.Ho 'nile ha ithutoa mefuta e fapaneng ea li-silicone tsa tšepe bakeng sa theknoloji ea ho ikopanya le ho hokahanya ha lisebelisoa tsa semiconductor.MoSi2, WSl leNi2Si li kenyelelitsoe ntlafatsong ea lisebelisoa tsa microelectronic.Lifilimi tsena tsa silicon-basedthin li tsamaisana hantle le lisebelisoa tsa silicon,' me li ka sebelisoa bakeng sa ho pata, ho itšehla thajana. , passivation le ho hokahanya lisebelisoa tsa silicon, NiSi, e le silicidematerial e tšepisang ka ho fetisisa e ikemetseng bakeng sa lisebelisoa tsa nanoscale, e ithutoe ka bophara bakeng sa tahlehelo ea eona e tlaase ea silicon le tekanyetso e tlaase ea mocheso oa mocheso, ho hanyetsa ho tlaase le ho se na phello ea linewidth Ho graphene electrode, nickel silicide e ka liehisa. ketsahalo ea pulverization le ho phatloha ha silicon electrode, le ho ntlafatsa conductivity ea electrode. The wetting and spreading effects of nisi2 alloy on SiC ceramics at different.
lithempereichara le maemo a leholimo li ile tsa hlahlojoa.