Niobium Siliicide NbSi2 pauka Kumukuai

Hiʻona oNiobium Siliicide

Huahana kiko'ī oNiobium Siliicidepauda

Nano papa(99.9%):10nm,20nm,30nm,40nm,50nm,80nm,100nm,200nm,300nm,500nm,800nm.

Micro grade(99.9%):1um,3um,5um,10um,20um,30um,40nm,45um,75um,150um,200um,300um.

ʻO nā palena o NiSi2 penei:
Kemika haku mele: Si: 4.3%，Mg:0.1%, ke koena o Ni

Māmā: 8.585g/cm3

Kū'ē: 0.365 Q mm2 / M
Koefficient mahana kū'ē (20-100 ° C)689x10 ho'ēmi i ka mana 6 / KCoefficient o ka hoʻonui wela (20-100° C)17x10 hoʻemi i ka mana 6 / K
Ka hoʻoheheʻe wela (100° C)27xwm mana ʻino mua ʻole K mana mua ʻino ʻole Kekahi heheʻe: 1309 °c
Nā kahua noi:
ʻO Silicon ka mea i hoʻohana nui ʻia i nā mea semiconductor.Ua aʻo ʻia nā ʻano silicides metala no ka hoʻopili ʻana a me ka ʻenehana interconnection o nā mea semiconductor. Ua hoʻokomo ʻia ʻo MoSi2, WSl a me Ni2Si i loko o ka hoʻomohala ʻana i nā mea microelectronic. ʻO kēia mau kiʻi ʻoniʻoni silicon-based i hoʻohālikelike maikaʻi ʻia me nā mea silika, a hiki ke hoʻohana ʻia no ka insulation, kaawale. ,passivation a me ka interconnection i loko o ka silika mea, NiSi, e like me ka loa olelo hoopomaikai ia iho-aligned silicidematerial no nanoscale mea, ua aʻo nui ia no kona haʻahaʻa silika poho a me ka hoʻohaʻahaʻa formation wela kālā, haʻahaʻa resistivity a me ka linewidth hopena I ka graphene electrode, nickel silicide hiki ke hooloihi i ka ʻO ka hiki ʻana o ka pulverization a me ka haki ʻana o ka electrode silicon, a hoʻomaikaʻi i ka conductivity o ka electrode. ʻO ka pulu a me ka hoʻolaha ʻana i nā hopena o nisi2 alloy ma SiC ceramics ma nā ʻano like ʻole.
ua noiʻi ʻia nā mahana a me nā lewa.