Niobium Silicide NbSi2 ifu Igiciro

Ikiranga cyaNiobium Silicide

Ibicuruzwa bisobanuraNiobium Silicideifu

Urwego rwa Nano (99,9%): 10nm, 20nm, 30nm, 40nm, 50nm, 80nm, 100nm, 200nm, 300nm, 500nm, 800nm.

Icyiciro cya Micro (99,9%): 1um, 3um, 5um, 10um, 20um, 30um, 40nm, 45um, 75um, 150um, 200um, 300um.

Ibipimo bya NiSi2 nibi bikurikira:
Ibigize imiti: Si: 4.3% ， Mg: 0.1%, ahasigaye ni Ni

Ubucucike: 8.585g / cm3

Kurwanya: 0.365 Q mm2 / M.
Ubushyuhe bwo guhangana nubushyuhe (20-100 ° C) 689x10 ukuyemo imbaraga za 6 / KCefficient yo kwagura ubushyuhe (20-100 ° C) 17x10 ukuyemo imbaraga za 6 / K
Ubushyuhe bwumuriro (100 ° C) 27xwm bubi imbaraga za mbere K mbi imbaraga zambereIcyerekezo: 1309 ° c
Imirima yo gusaba:
Silicon nibikoresho bikoreshwa cyane muri semiconductor.Silicide zitandukanye zicyuma zashizweho kugirango zimenyekanishe hamwe n’ikoranabuhanga rihuza ibikoresho bya semiconductor.MoSi2, WSl naNi2Si byinjijwe mu iterambere ry’ibikoresho bya mikorobe. Izi filime zishingiye kuri silicon zifite aho zihurira neza n’ibikoresho bya silikoni, kandi zishobora gukoreshwa mu gukumira, kwigunga. , passivation no guhuza mubikoresho bya silicon, NiSi, nkicyizere cyo kwishyiriraho silicidematerial yifashisha ibikoresho bya nanoscale, yakozweho ubushakashatsi cyane kubijyanye no gutakaza silikoni nkeya hamwe ningengo yimikorere mike, kutarwanya imbaraga kandi nta ngaruka ya linewidth Muri graphene electrode, nikel siliside irashobora gutinda kubaho kwa pulverisation no gucamo electrode ya silicon, no kunoza imikorere ya electrode. Ingaruka zo gukwirakwiza no gukwirakwiza nisi2 alloy kuri ceramics ya SiC zitandukanye.
ubushakashatsi bwakozwe n'ubushyuhe n'ikirere.